Solution leverages ST power chip portfolio by combining silicon carbide (SiC), gallium nitride (GaN),and silicon technologies with advanced custom design at both chip and package levels.
The company collaborates with NVIDIA to advance 800 VDC power architectures, highlighting over 98% efficiency and superior power density versus SiC and lower-voltage GaN solutions.
PCIe 6.0 doubles the bandwidth of PCIe 5.0 to 64 GT/s (giga transfers per second) per lane, providing the necessary data pipeline to keep the most powerful AI accelerators consistently supplied.
Renesas’ GaN-based converters achieve up to 98% efficiency, supporting scalable 48V–800V DC architectures to meet growing AI data center power demands.
The new reference board combines the Renesas RA2L2 MCU with a 48 MHz Arm Cortex-M23 and USB Type-C 2.4 support, and the InvenSense ICM-42688-P 6-axis MEMS sensor with 2.8 mdps/√Hz gyro and 70 µg/√Hz accelerometer noise.
Compact add-on board powered by Toshiba’s TB67S559FTG BiCD constant-current IC delivers 8.2–44V operation, up to 1/32 microstepping, and plug-and-play mikroBUS support for fast motor-control prototyping.