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Toshiba News

Toshiba Launches 3rd generation SiC MOSFETs

With a 650V drain-source voltage and a -10V to 25V gate-source range, the new MOSFETs offer simplified circuit design and wide compatibility for various gate drive circuits.

Toshiba News

Toshiba and SICC Collaborate on SiC Wafers

Toshiba and SICC have signed an MOU to improve the quality and characteristics of SiC power semiconductor wafers, ensuring a stable supply for the growing demand in AI data centers.

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