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For Automotive Applications, 850 nm and 940 nm Devices Offer High Drive Currents to 1.5 A DC and 5 A Pulsed, Radiant Intensity to 6000 mW/sr in 3.4 mm by 3.4 mm SMD Packages.
Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values.